Vdd = 1.1
IntputSlew(not used) = 1
EtaSlopeFactor(not used) = 1
StackingVsatFactor(not used) = 1
PMobility(Ueff fitted) = 4.308e-3
NMobility (Ueff fitted) =1.11e-2
Vth_P (fitted) = 0.5230
Vth_N (fitted) = 0.6
Vdsat_P(not used) = 0.14
Vdsat_N(not used) = 0.14
CriticalField_P(fitted) = 3.087e07
CriticalField_N(fitted) = 2.012e07
Lambda_P(fitted) = 0.3
Lambda_N(fitted) = 0.25
BottomCap(cjd) = 5e-04
SideWallCap(cjsws) = 5e-10
GateEdgeCap(cjswgs) = 3e-10
OxideCap = 1.9e-2
OverlapCap(cgdo or cgso) = 1.1e-10
LoadCap = 6.33e-15
DiffusionRes(not used) = 0
VelSat_P = 9e04;
VelSat_N = 130e03
SCref_P(nm) = 1000
SCref_N(nm) = 1000
KU0WE_P = 0;
KU0WE_N = 0;
KVTH0WE_P(*-1) = 0
KVTH0WE_N = 0
WEB_P = -310
WEB_N = -210
WEC_P = -3510
WEC_N = -3010
LI_cap boolean flag = 1
dielectricConstant = 3.45e-11
LI_thickness(nm) = 360 
